MOSFETs Silicon N-channel MOS (U-MOS)
TK10S04K3L
1.
Applications
• Automotive • Motor Drivers • DC-DC Converters • Switching
Voltage Regulators
2.
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK10S04K3L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
Start of commercial production
2011-04
1
2014-08-04
Rev.
4.
0
TK10S04K3L
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
40
V
Gate-sour...