MOSFETs Silicon N-Channel MOS (π-MOS)
TK10X40D
1.
Applications
• Switching
Voltage Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
46 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 400 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK10X40D
1: Gate (G) 2: N.
C.
3: Source (S) 4: Drain (D) (Heatsink)
TFP
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
400
V
Gate-source
voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
10
A
Drain current (pulse...