MOSFETs Silicon N-channel MOS (U-MOS-H)
TK11S10N1L
1.
Applications
• Automotive • Motor Drivers • Switching
Voltage Regulators
2.
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
1 mA)
3.
Packaging and Internal Circuit
TK11S10N1L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
©2017-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-07
2020-06-24 Rev.
4.
0
TK11S10N1L
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
...