isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
TK20A60W, ITK20A60W
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
155Ω (typ.
) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.
7 to 3.
7V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
80
PD
Total Dissipation @TC=25℃
45
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UN...