iscN-Channel
MOSFET Transistor
TK5P60W
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.
77Ω (typ.
) ·Easy to control Gate switching ·Enhancement mode:
Vth = 2.
7 to 3.
7V (VDS = 10 V, ID=0.
27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
5.
4
A
IDM
Drain Current-Single Pulsed
21.
6
A
PD
Total Dissipation @TC=25℃
30
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMA...