MOSFETs Silicon N-Channel MOS (π-MOS)
TK60J25D
1.
Applications
• Switching
Voltage Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
0285 Ω (typ.
) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK60J25D
1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S)
TO-3P(N)
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
250
V
Gate-source
voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC)...