isc N-Channel
MOSFET Transistor
TK7J90E
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤2.
0Ω.
·Enhancement mode:
Vth = 2.
5 to 4.
0V (VDS = 10 V, ID=0.
7mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
900
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pulsed
21
A
PD
Total Dissipation @TC=25℃
200
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth...