TK80D08K3 com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80D08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.
6 mΩ (typ.
) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
10.
0±0.
3 9.
5±0.
2 A 0.
6±0.
1 Ф3.
65±0.
2
Unit: mm
3.
2 2.
8 1.
1±0.
15 2.
8Max.
9.
0 15.
0±0.
3 0.
75±0.
25 12.
8±0.
5 +0.
25 0.
57 -0.
10
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR ...