iscN-Channel
MOSFET Transistor
INCHANGE Semiconductor
TK9A55DA,ITK9A55DA
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.
68Ω (typ.
) ·Enhancement mode:
Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
550
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
8.
5
IDM
Drain Current-Single Pulsed
34
PD
Total Dissipation @TC=25℃
40
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHAR...