Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
BVDSS 600V
TMAN16N60
N-channel
MOSFET ID RDS(on) 16A 0.
47W
Device TMAN16N60
Package TO-3PN
Marking TMAN16N60
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” fro...