Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D-PAK
TMD3N50Z(G)/TMU3N50Z(G)
BVDSS 500V
N-channel
MOSFET
ID RDS(on)
2.
5A
2.
8W
I-PAK
Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and S...