MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD7185-2
FEATURES
n HIGH POWER P1dB=33.
0dBm at 7.
1GHz to 8.
5GHz n HIGH GAIN G1dB=28.
0dB at 7.
1GHz to 8.
5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain Supply
Voltage Gate Supply
Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression www.
DataSheet4U.
com Drain Current Input VSWR 3rd Order Intermodulation Distortion Point ...