Preliminary Specification Dual N-Channel Dual-Gate
MOSFET
□ Description
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction.
It is consists of two equal dual gate
MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against excessive input
voltage surges.
The transistor has a SOT363 microminiature plastic package.
TMF3201J
SOT363
Unit in mm
□ Features
- Two AGC
amplifiers in a single package - Integrated gate protect...