Semiconductor
TMF8901F
Si RF LDMOS Transistor
SOT-89
Unit in mm
□ Applications
- VHF and UHF wide band amplifier
4
□ Features
- Power gain GP = 12.
5 dB at VDS = 4.
5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.
5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ.
)
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□ Marking
4
Pin Configuration
1.
Gate 2.
Source
8901
1 2 3
3.
Drain 4.
Source
□ Absolute Maximum Ratings (TA = 25 ℃)
Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 13.
0 4.
0 1.
2 3 150 -65 ~ 150 Unit V V A W ℃ ℃
TMF8901F
□ Electrical Ch...