Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
TMP2N65AZ(G)/TMPF2N65AZ(G)
BVDSS 650V
N-channel
MOSFET
ID RDS(on)
1.
8A
4.
6W
Device TMP2N65AZ / TMPF2N65AZ TMP2N65AZG / TMPF2N65AZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt ...