Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
TMP3N50AZ(G)/TMPF3N50AZ(G)
BVDSS 500V
N-channel
MOSFET
ID RDS(on)
2.
5A
2.
8W
Device TMP3N50AZ / TMPF3N50AZ TMP3N50AZG / TMPF3N50AZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt ...