D
CMOS/EEPROM/EPROM Technologies on a
Single Device – Mask-ROM Devices for High-Volume
Production – One-Time-Programmable (OTP) EPROM
Devices for Low-Volume Production – Reprogrammable EPROM Devices for
Prototyping Purposes
D Internal System Memory Configurations
– On-Chip Program Memory Versions – ROM: 24K Bytes – EPROM: 24K Bytes
– Data EEPROM: 256 Bytes – Static RAM: 512 Bytes
D Flexible Operating Features
– Low-Power Modes: STANDBY and HALT – Commercial, Industrial, and Automotive
Temperature Ranges – Clock Options:
– Divide-by-4 (0.
5 MHz – 5 MHz SYSCLK) – Divide-by-1 (2 MHz – 5 MHz SYSCLK)
Phase-Locked Loop (PLL) – Supply
Voltage (VCC): 5 V ± 10%
D Eight-Channel 8-Bit Analog-to-Digital
...