TPC8028
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8028
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 40 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b...