TPCC8064-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCC8064-H
1.
Applications
• • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2.
Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 5.
0 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 7.
9 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source
voltage Gate-source
voltage Drain current (DC) Drain c...