MOSFETs Silicon N-channel MOS (U-MOS�-H)
TPH12008NH
1.
Applications
• DC-DC Converters • Switching
Voltage Regulators • Motor Drivers
2.
Features
(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.
1 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 10.
1 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
3 mA)
3.
Packaging and Internal Circuit
TPH12008NH
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-05
2022-08-19 Rev.
3.
0
TPH12008NH
4.
Absolute Maximum Ratings (N...