MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN1200APL
1.
Applications
• High-Efficiency DC-DC Converters • Switching
Voltage Regulators • Motor Drivers
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 7.
5 nC (typ.
) (3) Small output charge: Qoss = 24 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 9.
8 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
3 mA)
3.
Packaging and Internal Circuit
TPN1200APL
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2017-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2017-10
2019-10-18 Rev.
2.
0
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