MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN2R703NL
1.
Applications
• High-Efficiency DC-DC Converters • Switching
Voltage Regulators
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 5.
2 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 3.
3 mΩ (typ.
) (VGS = 4.
5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
3 mA)
3.
Packaging and Internal Circuit
TPN2R703NL
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS 30 V
Gate-source
voltage
VGSS
±20
Drain...