MOSFETs Silicon P-Channel MOS (U-MOS)
TPN4R712MD
1.
Applications
• Lithium-Ion Secondary Batteries • Power Management Switches
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 3.
8 mΩ (typ.
) (VGS = -4.
5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -1.
0 mA)
3.
Packaging and Internal Circuit
TPN4R712MD
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-12
2019-10-30 Rev.
5.
0
TPN4R712MD
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-sou...