MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN5900CNH
1.
Applications
• High-Efficiency DC-DC Converters • Switching
Voltage Regulators
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 2.
6 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA)
3.
Packaging and Internal Circuit
TPN5900CNH
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
1 2013-10-07 Rev.
1.
0
TPN5900CNH
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS 150 V
Gat...