Ordering number :EN5960
NPN Triple Diffused Planar Silicon Transistor
TS7990
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown
voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm 2039D-TO3PML
[TS7990]
ø3.
4 16.
0 5.
6 3.
1
5.
0 8.
0 21.
0 22.
0
4.
0
2.
8 2.
0
2.
0
20.
4
1.
0
0.
6
1
2
3
5.
45
5.
45
1:Base 2:Collector 3:Emitter SANYO:TO-3PML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Colletctor-to-Base
Voltage Colletctor-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tem...