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TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8389
DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 10° • Low forward
voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: For definitions of compliance
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