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Preliminary
TSC5302D
High
Voltage NPN Transistor with Diode
Pin assignment: 1.
Base 2.
Collector 3.
Emitter
BVCEO = 400V BVCBO = 800V Ic = 2A VCE (SAT), = 1.
0V @ Ic / Ib = 1A / 0.
2A
Features
Built-in free-wheeling diode makes efficient anti saturation operation.
No need to interest an hfe value because of low variable storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information
Part No.
TSC5302DCH TSC5302DCP Packing Tube T&R Package TO-251 TO-252
Block Diagram
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 oC unl...