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Preliminary
TSC5305D
High
Voltage NPN Transistor with Diode
TO-263
Pin assignment: 1.
Base 2.
Collector 3.
Emitter
BVCEO = 400V BVCBO = 750V Ic = 5A VCE (SAT), = 1.
2V @ Ic / Ib = 4A / 1A
Features
Built-in free-wheeling diode makes efficient anti saturation operation.
No need to interest an hfe value because of low variable storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information
Part No.
TSC5305DCZ TSC5305DCM Packing Tube T&R Package TO-220 TO-263
Block Diagram
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 ...