creat by ART
TSF20H120C
Taiwan Semiconductor
FEATURES
Dual High-
Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward
voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs.
max.
Weight: 1.
7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC...