TSP4N60M/TSF4N60M
TSP4N60M/TSF4N60M
600V N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 4.
0A,600V,Max.
RDS(on)=2.
5 Ω @ VGS =10V • Low gate charge(typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
Absolute Maximum Ratin...