TSP730M / TSF730M
400V N-Channel
MOSFET
General Description
This Pow er
MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.
Features
• 6.
0A, 400V, RDS(on) = 1.
00Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Fast wsitching • 100% avalanche tested • Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
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