End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1)
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TSFF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 870 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22°
• Low forward
voltage • Suitable for high pulse current operation • High modula...