www.
vishay.
com
TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 8389
DESCRIPTION TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5
• Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 10°
• Low forward
voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz • Good spectral matching with
CMOS cameras • Compliant to RoHS Directive 2...