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TSHG6210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward
voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with
CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
94 8389
DESCRIPTION
TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double heter...