TSM2312
20V N-Channel
MOSFET
SOT-23
Pin Definition: 1.
Gate 2.
Source 3.
Drain
Key Parameter Performance
Parameter
Value
VDS VGS = 4.
5V
RDS(on) (max) VGS = 2.
5V VGS = 1.
8V
Qg
20 33 40 51 11
Unit V
mΩ
nC
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2312CX RF
SOT-23
3kpcs / 7” Reel
TSM2312CX RFG SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain 900ppm bromine, 900ppm chlorine (1500ppm total
Br + Cl) and 1000ppm antimony compounds
Block Diagram
N-Channel
MOSFET
Absolute Maximum Ratings...