TSM2320
20V N-Channel Enhancement Mode
MOSFET
Pin assignment: 1.
Gate 2.
Source 3.
Drain
VDS = 20V RDS (on), Vgs @ 4.
5V, Ids @ 3.
0A = 45mΩ RDS (on), Vgs @ 2.
5V, Ids @ 2.
0A = 65mΩ
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Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2320CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Op...