isc Silicon NPN Power Transistor
TT2170LS
DESCRIPTION ·High Switching Speed ·High
Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Pa
Collector Power Dissipation @Ta=25℃
TJ
Junction Temperature
12
A
25
W
2
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTIC...