monolithic dual n-channel JFETs designed for • • •
• Differential
Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source
Voltage ______ ••••••••• -50 V Gate Current ••••••••••••••••••••••••••••••• 50mA Total Device Dissipation at 25°C
(Derate 1.
7 mW/oC to 200°C) ••••••••••••••• 300mW
Storage Temperature Range •••••••••••••• -65 to +200°C Lead Temperature
(1/16" from case for 10 seconds) •.
.
.
.
•••••.
•••• 300°C
H
Siliconix
Performance Curves NQP See Section 4
BENEFITS
• Good Matching Characteristics
TO-71 See Section 6
~~G, G2 s, S2
0,S2
G, ,0 o·o.
°1
'0 10
07
G2
s,
Bottom View
Gt.
, 0,
~,
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
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