matched dual n-channel JFET
designed for • • •
• Wideband DiHerential
Amplifiers
H
Siliconix
Performance Curves NZP-D, NNZ
See Section 4
.
BENEFITS
• High Gain through 100 MHz 9fs = 4500 ",mho Minimum
• Matching Characteristics Specified
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source
Voltage .
.
.
•.
-25 V
Gate Current .
.
.
•.
.
.
.
•.
.
•.
.
.
.
50mA
Device Dissipation (Each Side).
T A =85°C
(Derate 3.
85 mWrC) .
.
•.
•.
.
.
.
••.
250 mW
Total Device Dissipation, TA =85°C
(Derate 7.
7 mWrC) .
.
.
'•.
.
.
.
500 mW Storage Temperature Range ••.
.
•.
.
.
-65 to + 200°C Lead Temperature
(1/16" from case for 10 seconds) .
•.
.
.
300°C
TO-7B So.
Sect...