UF28150J PRELIMINARY POWER
MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
FEATURES OUTLINE DRAWING
• N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching • Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Drain-Source
Voltage Gate-Source
Voltage Drain-Source Current Dissipation @25°C Storage Temperature Junction Temperature Thermal Resistance VDS VGS IDS PD Tstg Tj 60 20 28 233 -55 to +150 200 0.
75
Units
V V A W °C °C °C/W
θjc
ELECTRICAL CHARACTERISTICS AT 25°C (*per side) Parameter Symbol Min Max
Drain-Source Breakdown
Voltage Drain-Source Leakage Current G...