25mW - 650V SiC Normally-On JFET | UJ3N065025K3S
Datasheet
Description
United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors.
This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.
The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
CASE G (1)
CASE D (2)
123
Part Number UJ3N065025K3S
S (3)
Package TO-247-3L
Marking UJ3N065025K3S
Features
w Typical on-resistance RDS(on),typ of 25mW w
Voltage controlled w Maximum operating temperature of 175°C w Extr...