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Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits Features
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
0.
23+0.
05 –0.
02 0.
33+0.
05 –0.
02 3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 0.
10+0.
05 –0.
02
Unit: mm
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5°
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 80 100 125 –55 to +125
Unit V V mA mW °C °C
1: Base 2: Emitter 3: Collector
0.
15 min.
Absolute Maximum Ratings Ta...