DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1701A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • 2.
5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.
) (VGS = 4.
0 V, ID = 3.
5 A) 1.
44 RDS(on)2 = 40 mΩ (MAX.
) (VGS = 2.
5 V, ID = 3.
5 A) • Low Ciss : Ciss = 1040 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.
8 MAX.
1 5.
37 MAX.
4 6.
0 ±0.
3 4.
4 +0.
10 –0.
05 0.
8 0.
15 0.
05 MIN.
0.
5 ±0.
2 0.
10 1.
27 0.
78 MAX.
0.
40 +0...

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