DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Super low on-state resistance 1.
44 RDS(on)1 = 19.
0 mΩ TYP.
(VGS = 10 V, ID = 4.
0 A) 1.
8 Max.
1 5.
37 Max.
4 6.
0 ±0.
3 4.
4 +0.
10 –0.
05 0.
8 RDS(on)2 = 30.
0 mΩ TYP.
(VGS = 4.
5 V, ID = 4.
0 A) • Low Ciss : Ciss = 750 pF TYP.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.
15 0.
05 Min.
0.
5 ±0.
2 0.
10 1.
27 0.
40 0.
78 Max.
0...

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