PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA805T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Noise, High Gain • Operable at Low
Voltage • Small Feed-back Capacitance Cre = 0.
3 pF TYP.
• Built-in 2 Transistors (2 × 2SC4958)
PACKAGE DRAWINGS
(Unit: mm)
2.
1±0.
1 1.
25±0.
1
0.
65 0.
65
2.
0±0.
2
1.
3
2
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
3
0.
9±0.
1
µPA805T
0.
7
4
5
µPA805T-T1
Taping products (3 KPCS/Reel)
Remark If you require an evaluation sample, please con...