DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4443362
4M-BIT
CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
Description
The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced
CMOS technology using Full-
CMOS six-transistor memory cell.
The µPD4443362 is suitable for applications which require synchronous operation, high-speed, low
voltage, highdensity memory and wide bit configuration, such as cache and buffer memory.
The µPD4443362 is packaged in 100-pin plastic LQFP with a 1.
4 mm package thickness for high density and low capacitive loading.
Features
• Fully synchronous operation • HSTL Input / Output lev...