www.
vishay.
com
V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.
53 V at IF = 5 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.
1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward
voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS
For use in low
voltage high frequency DC/D...