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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN0300L/D
TMOS FET Transistor
N–Channel — Enhancement
2 GATE 3 DRAIN
VN0300L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating Drain – Source
Voltage Drain – Gate
Voltage Gate – Source
Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.
8 — Unit V V Vdc Vpk mA mA mW mW/°C °C
1 2 3
CASE 29–04, STYLE 22 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction to Am...