VN2110
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • High Input Impedance and High Gain
Applications
• Motor Controls • Converters •
Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.
)
General Description
The VN2110 low-threshold, Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input im...