VNMA06
tcrSiliconix
~ incorporated
N·Channel Enhancement·Mode
MOSFET
DESIGNED FOR:
• Switching
FEATURES
• High Speed for Military Applications (see VNDQ06 for Industrial Applications)
I ITYPE
PACKAGE
DEVICE
Single TO-205AD.
JANTX2N6660
GEOMETRY DIAGRAM
0.
012 (0.
304)
0.
010 (0.
254)
T 0.
077 (1.
956)
Source Pad -I+--+---HIII+
Gate Pad ---1f+--l---HIII-
0.
0094
(0.
24)
0.
0095
(0.
241)
9 mil
7-158
~Siliconix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
I2.
0 Vas = 10 V
9V
1.
6 '/
8V
1.
2
10 (A) 0.
8
r;'" r;'"
7V 6V 5V
rr
0.
4
4V 3V
0
a 10 20 30 40
Vos (V)
50
VNMA06
Ohmic Region Characteristics 2.
0 r--.
.
.
,-r-~"T"--r-"T""".
.
.
,.
.
,r-.
.
.
,-,
1.
6 1...